Mô phỏng monte carlo ba chiều đi-ốt p-i-n bán dẫn GaAs có tính đến tương tác coulomb gần giữa điện tử và lỗ trống

This paper presents 3D simulation of carrier dynamics in GaAs p-i-n diodes taking into account the near Coulomb interaction between electrons and holes. We carry out the device simulation with respect to various electric fields of 70, 100 and 130 kV/cm. The simulation results show that the interaction gives a correction of 106 V/m, equal to 1/10 the total electric field in the device. The results also show that the velocity overshoot and the velocities obtained are not so different from ones in the cases in which the near Coulomb interaction is ignored. This indicates that the near Coulomb interaction has an unimportant role and we can almost ignore it in usual calculations